Fast switching diode chip in EMCON 3 -Technology
Fast switching diode chip in EMCON 3 -Technology
Характеристики
| Бренд | Infineon |
|---|---|
| Configuration | Single |
| Рабочая температура | -40 to 175 °C |
| Peak Forw | 1.32 V |
| Peak Aver | 150 A |
| Peak Repe | 650 V |
| Peak Reve | 1.8 uA |
| Type Prod | Switching Diode |
| Schedule B | 8542330000 |
| HTSN | 8542330001 |
| Family | SIDC38D65C8 |
| Упаковка | Wafer |
SKU: SIDC38D65C8X1SA1