DRAMs Parts and Modules
DRAMs Parts and Modules
- Low Voltage (L): Vdd and Vddq = 1.35V + 0.1V, -0.067V
- - Backward compatible to 1.5V High speed data transfer rates with system
- frequency up to 1066 MHz 8 internal banks for concurrent operation
- 8n-Bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL-1,CL-2
- Programmable CAS WRITE latency (CWL) based
- on tCK Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential or
- Interleave BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Configuration
- 256Mx8 Package
- 78-ball FBGA (8mm x 10.5mm) for x8
- Refresh Interval:
- 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C Partial Array Self Refresh
- Asynchronous RESET pin
- OCD (Off-Chip Driver Impedance Adjustment)
- Dynamic ODT (On-Die Termination)
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 O)
- Write Leveling
- Up to 200 MHz in DLL off mode
- Operating temperature
- Commercial (TC = 0°C to +95°C)
- Industrial (TC = -40°C to +95°C)
Характеристики
| Бренд | ISSI |
|---|---|
| Number Of | 8 Bit |
| Density | 2 Gbit |
| Data Bus Width | 8 Bit |
| Screening Level | Commercial |
| Organization | 256M x 8 |
| Type Prod | DDR3L SDRAM |
| Address B | 16 Bit |
| Maximum O | 82 mA |
| Рабочая температура | 0 to 95 °C |
| Number Of Banks | 8 |
| Maximum R | 20 ns |
| Number Of | 8 Bit |
| Operating | 1.3500 V |
| Schedule B | 8542320023 |
| HTSN | 8542320036 |
| Страна происхождения | Taiwan |
| Family | IS43TR82560BL |
SKU: IS43TR82560BL-125KBL