DRAMs Parts and Modules
DRAMs Parts and Modules
- Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
- Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
- High speed data transfer rates with system frequency up to 1066 MHz
- 8 internal banks for concurrent operation
- 8n-Bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL-1,CL-2
- Programmable CAS WRITE latency (CWL) based on tCK
- Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential or Interleave
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Refresh Interval:
- 7.8 us (8192 cycles/64 ms) TC= -40°C to 85°C
- 3.9 us (8192 cycles/32 ms) TC= 85°C to 105°C
- Partial Array Self Refresh
- Asynchronous RESET pin
- TDQS (Termination Data Strobe) supported (x8 only)
- OCD (Off-Chip Driver Impedance Adjustment)
- Dynamic ODT (On-Die Termination)
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ?)
- Write Leveling
- Up to 200 MHz in DLL off mode
- Operating temperature:
- Commercial (TC = 0°C to +95°C)
- Industrial (TC = -40°C to +95°C)
- Automotive, A1 (TC = -40°C to +95°C)
- Automotive, A2 (TC = -40°C to +105°C)
Характеристики
| Бренд | ISSI |
|---|---|
| Number Of | 16 Bit |
| Density | 2 Gbit |
| Data Bus Width | 16 Bit |
| Screening Level | Commercial |
| Maximum C | 1600 MHz |
| Organization | 128M x 16 |
| Type Prod | DDR3 SDRAM |
| Address B | 14 Bit |
| Maximum O | 95 mA |
| Рабочая температура | 0 to 95 °C |
| Number Of Banks | 8 |
| Maximum R | 20 ns |
| Number Of | 16 Bit |
| Operating | 1.5000 V |
| Schedule B | 8542320023 |
| HTSN | 8542320036 |
| Страна происхождения | Китай |
| Family | IS43TR16128B |
SKU: IS43TR16128B-125KBL