DRAMs Parts and Modules
DRAMs Parts and Modules
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-compatible)
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with CK
- 4 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported
- Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported
- WRITE latency = READ latency - 1 tCK
- Programmable burst lengths: 4 or 8
- Adjustable data-output drive strength, full and reduced strength options
- On-die termination (ODT)
- Configuration: 16Mx16 (4Mx16x4 banks) IS43DR16160B
- Package:
- 84-ball TW-BGA (8mm x 12.5mm)
- Timing – Cycle time
- 2.5ns @CL=5 DDR2-800D
- 2.5ns @CL=6 DDR2-800E
- 3.0ns @CL=5 DDR2-667D
- 3.75ns @CL=4 DDR2-533C
- 5.0ns @CL=3 DDR2-400B
- Temperature Range:
- Commercial (0°C = TC = 85°C)
- Industrial (-40°C = TC = 95°C; -40°C = TA = 85°C)
- Automotive, A1 (-40°C = TC = 95°C; -40°C = TA = 85°C)
- Automotive, A2 (-40°C = TC; TA = 105°C) TC = Case Temp, TA = Ambient Temp
Характеристики
| Бренд | ISSI |
|---|---|
| Number Of | 16 Bit |
| Density | 256 Mbit |
| Data Bus Width | 16 Bit |
| Screening Level | Industrial |
| Maximum C | 266 MHz |
| Organization | 16M x 16 |
| Type Prod | DDR2 SDRAM |
| Address B | 13 Bit |
| Maximum O | 170 mA |
| Рабочая температура | -40 to 85 °C |
| Number Of Banks | 4 |
| Maximum R | 0.4 ns |
| Number Of | 16 Bit |
| Operating | 1.8000 V |
| Schedule B | 8542320015 |
| HTSN | 8542320024 |
| Страна происхождения | Taiwan |
| Family | IS43DR16160B |
SKU: IS43DR16160B-37CBLI