DRAMs Parts and Modules
ISSI"s 128Mb Synchronous DRAM achieves high-speeddata transfer using pipeline architecture. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4Banks.
- Clock frequency: 166, 143, 133 MHz
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access/precharge
- Single Power supply: 3.3V + 0.3V
- LVTTL interface
- Programmable burst length
- (1, 2, 4, 8, full page)
- Programmable burst sequence: Sequential/Interleave
- Auto Refresh (CBR)
- Self Refresh
- 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
- Random column address every clock cycle
- Programmable CAS latency (2, 3 clocks)
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
Характеристики
| Бренд | ISSI |
|---|---|
| Number Of | 32 Bit |
| Density | 128 Mbit |
| Data Bus Width | 32 Bit |
| Screening Level | Commercial |
| Maximum C | 166 MHz |
| Organization | 4M x 32 |
| Type Prod | SDRAM |
| Address B | 12 Bit |
| Maximum O | 120 mA |
| Рабочая температура | 0 to 70 °C |
| Number Of Banks | 4 |
| Maximum R | 6.5|5.4 ns |
| Number Of | 32 Bit |
| Operating | 3.3000 V |
| Schedule B | 8542320015 |
| HTSN | 8542320002 |
| Страна происхождения | Китай |
| Family | IS42S32400F |
| Упаковка | Tape and Reel |
SKU: IS42S32400F-6BL-TR