DRAMs Parts and Modules
ISSI"s 64Mb Synchronous DRAM IS42/45S32200L isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance.ThesynchronousDRAMsachievehigh-speeddata transfer using pipeline architecture.
- Clock frequency: 200, 166, 143, 133 MHz
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access/precharge
- Single 3.3V power supply
- LVTTL interface
- Programmable burst length: (1, 2, 4, 8, full page)
- Programmable burst sequence: Sequential/Interleave
- Self refresh modes
- 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
- Random column address every clock cycle
- Programmable CAS latency (2, 3 clocks)
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
Характеристики
| Бренд | ISSI |
|---|---|
| Number Of | 32 Bit |
| Density | 64 Mbit |
| Data Bus Width | 32 Bit |
| Screening Level | Industrial |
| Maximum C | 143 MHz |
| Organization | 2M x 32 |
| Type Prod | SDRAM |
| Address B | 11 Bit |
| Maximum O | 65 mA |
| Рабочая температура | -40 to 85 °C |
| Number Of Banks | 4 |
| Maximum R | 5.4 ns |
| Number Of | 32 Bit |
| Operating | 3.3000 V |
| Schedule B | 8542320015 |
| HTSN | 8542320002 |
| Страна происхождения | Китай |
| Family | IS42S32200L |
SKU: IS42S32200L-7TLI