DRAM Module DDR4 SDRAM 8Gbyte 260SODIMM
DRAM Module DDR4 SDRAM 8Gbyte 260SODIMM
- JEDEC standard 1.2V ± 0.06V Power Supply
- Vddq = 1.2V ± 0.06V
- 800 MHz fCK for 1600Mb/sec/pin,933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin,1200MHz fCK for 2400Mb/sec/pin
- 16 Banks (4 Bank Groups)
- Programmable CAS\ Latency: 11,13,15,17
- Programmable Additive Latency (Posted CAS\) : 0, CL - 2, or CL - 1 clock
- Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write
- Bi-directional Differential Data Strobe
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower then Tcase 85°C, 3.9us at 85°C < Tcase = 95°C
- Asynchronous Reset
Характеристики
| Бренд | Samsung |
|---|---|
| Schedule B | 8473300002 |
| HTSN | 8473301140 |
| Typical O | 1.2000 V |
| Module Type | 260SODIMM |
| Maximum C | 1066 MHz |
| Organization | 1Gx72 |
| Total Density | 8 GB |
| Sub Category | DDR4 SDRAM |
| Supplier | SODIMM |
| Data Bus Width | 72 Bit |
| Main Category | DRAM Module |
| Описание продукта | 69.6 x 3.7(Max) x 30 |
| Number Of | 18 |
| Chip Density | 4 Gbit |
| Рабочая температура | 0 to 85 °C |
| Screening Level | Commercial |
| Chip Pack | FBGA |
SKU: M474A1G43DB0-CPB00