DRAM Module DDR4 SDRAM 4Gbyte 288RDIMM
DRAM Module DDR4 SDRAM 4Gbyte 288RDIMM
- Standard = JEDEC
- Configuration = ECC
- Number of Module Ranks = 1
- Number of Devices = 9
- Vdd = Vddq = 1.2V
- Vpp = 2.5V
- Vddspd = 2.25V to 2.75V
- Cycle Time = 0.938ns
- CAS Latency = 9, 11, 12, 13, 14, 15, 16
- CAS Latency with Read DBI = TBD
- Additive Latency = 0, CL - 1, and CL - 2
- CAS Write Latency (CWL) = 9, 10, 11, 12, 14
- Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop)
- Burst Type = Sequential and Interleave
- Bi-Directional Differential Data Strobe
- On-Die Termination (ODT)
- 8 bit pre-fetch
- Device Package = FBGA
- Lead Finish = = 0.76µm Gold
- Length x Height = 133.35mm x 31.25mm
- No. of sides = Double-sided
- Mating Connector (Examples) Vertical = Molex - 0787261002 Vertical = TE Connectivity - 2199154-2
- Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
- Supports ECC error correction and detection
- Temperature sensor with integrated SPD
- Per DRAM Addressability is supported
- Internal VREF DQ level generation is available
- Write CRC is supported at all speed grades
- DBI (Data Bus Inversion) is supported (x8)
- CA parity (Command/Address Parity) mode is supported
- 288-Pins
Характеристики
| Бренд | SMART |
|---|---|
| Schedule B | 8473300002 |
| HTSN | 8473302000 |
| Typical O | 1.2000 V |
| Module Type | 288RDIMM |
| Organization | 512Mx72 |
| Total Density | 4 GB |
| Sub Category | DDR4 SDRAM |
| Supplier | RDIMM |
| Chip Density | 4 Gbit |
SKU: SH5127RD451851SD