DRAM Module DDR4 SDRAM 4Gbyte 260USODIMM
DRAM Module DDR4 SDRAM 4Gbyte 260USODIMM
- JEDEC standard 1.2V ± 0.06V Power Supply
- Vddq = 1.2V ± 0.06V
- 800 MHz fCK for 1600Mb/sec/pin,933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin,1200MHz fCK for 2400Mb/sec/pin
- 16 Banks (4 Bank Groups)
- Programmable CAS Latency: 11,13,15,17
- Programmable Additive Latency (Posted CAS) : 0, CL - 2, or CL - 1 clock
- Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write
- Bi-directional Differential Data Strobe
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower then Tcase 85°C, 3.9us at 85°C < Tcase = 95°C
- Asynchronous Reset
Характеристики
| Бренд | Samsung |
|---|---|
| Schedule B | 8542330000 |
| HTSN | 8473301140 |
| Typical O | 1.2000 V |
| Module Type | 260USODIMM |
| Maximum C | 1067 MHz |
| Organization | 512Mx64 |
| Total Density | 4 GB |
| Sub Category | DDR4 SDRAM |
| Supplier | USODIMM |
| Описание продукта | 69.6 x 3.7(Max) x 30 |
| Chip Density | 4 Gbit |
| Рабочая температура | 0 to 95 °C |
| Maximum O | 370 mA |
SKU: M471A5143DB0-CPB00