DRAM Module DDR4 SDRAM 16Gbyte 288LRDIMM
High-speed DDR4 SDRAM modules use DDR4 SDRAM devices with two or four internal memory bank groups. DDR4 SDRAM modules utilizing 4- and 8-bit-wide DDR4 SDRAM devices have four internal bank groups consisting of four memory banks each, providing a total of 16 banks. 16-bit-wide DDR4 SDRAM devices have two internal bank groups consisting of four memory banks each, providing a total of eight banks. DDR4 SDRAM modules benefit from DDR4 SDRAM"s use of an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM effectively consists of a single 8n-bitwide, four-clock data transfer at the internal DRAM core and eight corresponding n-bitwide, one-half-clock-cycle data transfers at the I/O pins.DDR4 modules use two sets of differential signals: DQS_t and DQS_c to capture data and CK_t and CK_c to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals.
- DDR4 functionality and operations supported
- 288-pin, command/address/control registered, data buffered dual in-line, load reduced memory module(LRDIMM)
- Fast data transfer rates: PC4-2400, or PC4-2133
- 16GB (2 Gig x 72)
- VDD = 1.20V (NOM)
- VPP = 2.5V (NOM)
- VDDSPD = 2.5V (NOM)
- Supports ECC error detection and correction
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die internal, adjustable, VREFDQ generation
- Dual-rank
- On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Gold edge contacts
- Halogen-free
- Fly-by topology
- Multiplexed command, and address bus
- Terminated control, command and address bus
Характеристики
| Бренд | Micron |
|---|---|
| Schedule B | 8542330000 |
| HTSN | 8542330001 |
| Typical O | 1.2000 V |
| Module Type | 288LRDIMM |
| Maximum C | 1075.26 MHz |
| Organization | 2Gx72 |
| Total Density | 16 GB |
| Sub Category | DDR4 SDRAM |
| Supplier | LRDIMM |
| Описание продукта | 133.48(Max) x 3.9(Max) x 31.4(Max) |
| Minimum O | 1.14 V |
| Lead Finish | Gold |
| Maximum O | 1.26 V |
| Chip Density | 4 Gbit |
| Рабочая температура | 0 to 95 °C |
| Maximum O | 1.71 A |
| Screening Level | Commercial |
SKU: MTA36ASF2G72LZ-2G1A1