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DRAM Module DDR4 SDRAM 16Gbyte 288LRDIMM

High-speed DDR4 SDRAM modules use DDR4 SDRAM devices with two or four internal memory bank groups. DDR4 SDRAM modules utilizing 4- and 8-bit-wide DDR4 SDRAM devices have four internal bank groups consisting of four memory banks each, providing a total of 16 banks. 16-bit-wide DDR4 SDRAM devices have two internal bank groups consisting of four memory banks each, providing a total of eight banks. DDR4 SDRAM modules benefit from DDR4 SDRAM"s use of an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM effectively consists of a single 8n-bitwide, four-clock data transfer at the internal DRAM core and eight corresponding n-bitwide, one-half-clock-cycle data transfers at the I/O pins.DDR4 modules use two sets of differential signals: DQS_t and DQS_c to capture data and CK_t and CK_c to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals.
  • DDR4 functionality and operations supported
  • 288-pin, command/address/control registered, data buffered dual in-line, load reduced memory module(LRDIMM)
  • Fast data transfer rates: PC4-2400, or PC4-2133
  • 16GB (2 Gig x 72)
  • VDD = 1.20V (NOM)
  • VPP = 2.5V (NOM)
  • VDDSPD = 2.5V (NOM)
  • Supports ECC error detection and correction
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die internal, adjustable, VREFDQ generation
  • Dual-rank
  • On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Gold edge contacts
  • Halogen-free
  • Fly-by topology
  • Multiplexed command, and address bus
  • Terminated control, command and address bus

Характеристики

Бренд Micron
Schedule B 8542330000
HTSN 8542330001
Typical O 1.2000 V
Module Type 288LRDIMM
Maximum C 1075.26 MHz
Organization 2Gx72
Total Density 16 GB
Sub Category DDR4 SDRAM
Supplier LRDIMM
Описание продукта 133.48(Max) x 3.9(Max) x 31.4(Max)
Minimum O 1.14 V
Lead Finish Gold
Maximum O 1.26 V
Chip Density 4 Gbit
Рабочая температура 0 to 95 °C
Maximum O 1.71 A
Screening Level Commercial
SKU: MTA36ASF2G72LZ-2G1A1 Поставщик: по запросу