DRAM Module DDR3 SDRAM 16Gbyte
DRAM Module DDR3 SDRAM 16Gbyte
- JEDEC standard 1.35V (1.28V-1.45V) and 1.5V (1.425V-1.575V) Power Supply
- Vddq = 1.35V (1.28V-1.45V) and 1.5V (1.425V-1.575V)
- 400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS\ Latency: 6,7,9,11
- Programmable Additive Latency (Posted CAS\) : 0, CL - 2, or CL - 1 clock1600)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write
- Bi-directional Differential Data Strobe
- Internal (self) calibration: Internal self-calibration through ZQ pin (RZQ: 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower then Tcase 85°C, 3.9us at 85°C < Tcase = ?95°C
- Asynchronous Reset
Характеристики
| Бренд | Samsung |
|---|---|
| Schedule B | 8473300002 |
| HTSN | 8473301140 |
| Typical O | 1.3500 V |
| Organization | 2Gx72 |
| Total Density | 16 GB |
| Sub Category | DDR3 SDRAM |
| Data Bus Width | 72 Bit |
| Main Category | DRAM Module |
| Number Of | 36 |
| Chip Density | 4 Gbit |
SKU: M393B2G70QH0-YK008