DRAM Module DDR2 SDRAM 8Gbyte 240RDIMM
The 8GB MetaRAM DDR2 module is made using two 256Mx4 base devices combined in a width stacked DDP to make a 256Mx8. The memory controller will believe the module is composed of 36 512Mx4 DRAM devices. The controller must send address/command signals for a 512Mx4 2 Rank module to the AM150 ASIC. The ASIC will convert the signals and fan them to the corresponding 256Mx4 device. The controller will only see one load per address, command and data pin.The module operates in registered mode, where the address and command inputs are clocked into register chips on the rising edge of the clock signal. The registered mode adds a one clock cycle delay to all the commands. A phase-lock loop (PLL) chip on the module receives the differential clock signal from the motherboard and re-drives multiple copies to the register and buffer chips on the module. The AM150 chip minimizes the loading on the address, control, and clock lines on the motherboard. The PLL used on the 8GB MetaRAM RDIMM is fully compliant with the JEDEC specifications. The module supports SECDED error detection and correction. It also supports x4 ChipKill™.
- Standard: JEDEC Standard I/O
- Configuration: ECC
- Cycle Time: 3.75ns
- CAS\ Latency: 6.0
- Write Latency (WL) : Read (CAS) Latency - 1
- Burst Length: 4, 8
- Burst Type: Sequential/Interleave
- No. of Internal Banks per SDRAM: 8
- Operating Voltage: 1.8V
- Refresh: 8K/64ms
- Device Physicals: Dual Die Package (DDP)
- Lead Finish: Gold
- Length x Height: 133.35mm x 30.40mm
- No. of sides: Double-sided
- Mating Connector (Examples) Vertical: Molex - 87705-0021
Характеристики
| Бренд | SMART |
|---|---|
| Schedule B | 8473300002 |
| HTSN | 8473301140 |
| Typical O | 1.8000 V |
| Module Type | 240RDIMM |
| Maximum C | 533 MHz |
| Organization | 1Gx72 |
| Total Density | 8 GB |
| Sub Category | DDR2 SDRAM |
| Supplier | RDIMM |
| Data Bus Width | 72 Bit |
| Main Category | DRAM Module |
| Описание продукта | 133.35 x 5.2 x 30.4 mm |
| Number Of | 72 |
| Minimum O | 1.7 V |
| Maximum O | 1.9 V |
| Chip Density | 1 Gbit |
| Рабочая температура | 0 to 65 °C |
| Maximum R | 0.5 ns |
| Maximum O | 4909 mA |
SKU: SG1027RDR225663MEM