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Diode Switching 600V 100A DIE

Emitter Controlled-Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled-Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled-Diode is optimized for Infineon IGBT technology.
  • 600V EMCON technology 70 µm chip
  • soft , fast switching
  • low reverse recovery charge
  • small temperature coefficient

Характеристики

Бренд Infineon
Описание продукта 6.5 x 6.5 x 0.07
Configuration Single
Рабочая температура -55 to 150 °C
Peak Forw 1.25 V
Peak Aver 100 A
Peak Repe 600 V
Peak Reve 27 uA
Type Prod Switching Diode
Supplier DIE
Schedule B 8541100040
HTSN 8541100040
SKU: SIDC42D60E6X1SA1 Поставщик: по запросу