Diode Switching 1700V DIE
Emitter Controlled-Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled-Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled-Diode is optimized for Infineon IGBT technology.
- 1700V technology, Emitter Controlled
- soft, fast switching
- low reverse recovery charge
- small temperature coefficient
Характеристики
| Бренд | Infineon |
|---|---|
| Описание продукта | 6.5 x 6.5 x 0.2 |
| Peak Forw | 2.15 V |
| Peak Repe | 1700 V |
| Peak Reve | 27 uA |
| Type Prod | Switching Diode |
| Schedule B | 8541100040 |
| HTSN | 8541100040 |
SKU: SIDC42D170E6X1SA2