Diode Switching 1200V DIE
Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
- 1200V Emitter Controlled technology 120 µm chip
- Soft, fast switching
- Low reverse recovery charge
- Small temperature coefficient
- Qualified according to JEDEC for target applications
Характеристики
| Бренд | Infineon |
|---|---|
| Описание продукта | 5.5 x 5.5 x 0.12 |
| Configuration | Single |
| Рабочая температура | -40 to 150 °C |
| Peak Forw | 1.6 V |
| Peak Repe | 1200 V |
| Peak Reve | 27 uA |
| Type Prod | Switching Diode |
| Supplier | DIE |
| Schedule B | 8541100040 |
| HTSN | 8541100040 |
SKU: SIDC30D120H8X1SA4