Diode Schottky 650V 4A 3-Pin(2+Tab) DPAK T/R
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: Insulated voltage: 2500 V rms Typical package capacitance: 7 pF
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Peak Aver | 4 A |
| Peak Repe | 650 V |
| Рабочая температура | -40 to 175 °C |
| Type Prod | Schottky Diode |
| Supplier | DPAK |
| Configuration | Single |
| Peak Non | 200 A |
| Peak Reve | 40 uA |
| Описание продукта | 6.6 x 6.2 x 2.4 mm |
| Peak Forw | 1.75 V |
| Schedule B | 8541100080 |
| HTSN | 8541100080 |
| Msl Level | 1 |
| Страна происхождения | Китай |
SKU: STPSC4H065B-TR