Diode Schottky 60V 2A 2-Pin DO-214AA T/R
This Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. This Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
- Compact Package with J–Bend Leads Ideal for Automated Handling
- Highly Stable Oxide Passivated Junction
- Guardring for Over–Voltage Protection
- Low Forward Voltage Drop
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Configuration | Single |
| Peak Repe | 60 V |
| Peak Forw | 0.7 V |
| Supplier | DO-214AA |
| Peak Reve | 400 uA |
| Type Prod | Schottky Diode |
| Peak Aver | 2 A |
| Peak Non | 50 A |
| Описание продукта | 4.75 x 3.95 x 2.45 mm |
| Schedule B | 8541100080 |
| HTSN | 8541100080 |
| Страна происхождения | Китай |
| Рабочая температура | -65 to 125 °C |
| Msl Level | 1 |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
SKU: SS26