Diode Schottky 60V 1A 2-Pin DO-41 Bulk
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Pb-Free Package is Available
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Configuration | Single |
| Peak Repe | 60 V |
| Peak Forw | 1 V |
| Supplier | DO-41 |
| Peak Reve | 500 uA |
| Type Prod | Schottky Diode |
| Peak Aver | 1 A |
| Peak Non | 25 A |
| Описание продукта | 5.2 x 2.7 x 2.7 mm |
| Schedule B | 8541100080 |
| HTSN | 8541100080 |
| Страна происхождения | Китай |
| Рабочая температура | -65 to 150 °C |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
SKU: MBR160G