Товарно-сырьевая торговая площадка

Diode Schottky 600V 8A DIE

Diode Schottky 600V 8A DIE
  • Revolutionary Semiconductor Material - Silicon Carbide
  • Switching Behaviour Benchmark
  • No Reverse Recovery / No Forward Recovery
  • Temperature Independent Switching Behaviour
  • Qualified According to JEDEC1) Based on Target Applications

Характеристики

Бренд Infineon
Peak Aver 8 A
Peak Repe 600 V
Рабочая температура -55 to 175 °C
Type Prod Schottky Diode
Supplier DIE
Configuration Single
Peak Non 59 A
Peak Reve 100 uA
Описание продукта 1.65 x 1.52 x 0.35
Peak Forw 1.7 V
Schedule B 8541100040
HTSN 8541100040
SKU: IDC08S60CEX1SA3 Поставщик: по запросу