Diode Schottky 600V 4A 3-Pin(2+Tab) TO-252

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V f values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design concept consisting in regularly distributed p-doped areas, in conjunction with the pure Schottky ones: the so-called “merged pn-structure” (MPS).

Benchmark switching behavior

No reverse recovery charge

Temperature independent switching behavior

High operating temperature (T _j max 175°C)