Diode Schottky 600V 4A 3-Pin(2+Tab) DPAK T/R
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Peak Aver | 4 A |
| Peak Repe | 600 V |
| Рабочая температура | -40 to 175 °C |
| Type Prod | Schottky Diode |
| Supplier | DPAK |
| Configuration | Single |
| Peak Non | 40 A |
| Peak Reve | 50 uA |
| Описание продукта | 6.6 x 6.2 x 2.4 mm |
| Peak Forw | 1.9 V |
| Schedule B | 8541100080 |
| HTSN | 8541100080 |
| Lead Finish | Matte Tin |
| Msl Level | 1 |
| Max Proce | 260 |
| Страна происхождения | Китай |
SKU: STPSC406B-TR