Diode Schottky 35V 10A 3-Pin(2+Tab) DPAK T/R
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
- Highly Stable Oxide Passivated Junction
- Guardring for Stress Protection
- Matched dual die construction - May be Paralleled for High Current Output
- High dv/dt Capability
- Short Heat Sink Tap Manufactured - Not Sheared
- Very Low Forward Voltage Drop
- Epoxy Meets UL94, VO at 1/8"
- Pb-Free Package is Available
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Configuration | Dual Common Cathode |
| Peak Repe | 35 V |
| Peak Forw | 0.56 V |
| Supplier | DPAK |
| Peak Reve | 2 mA |
| Type Prod | Schottky Diode |
| Peak Aver | 10 A |
| Peak Non | 50 A |
| Описание продукта | 6.73 x 6.22 x 2.38 mm |
| Schedule B | 8541100080 |
| HTSN | 8541100080 |
| Страна происхождения | United States |
| Рабочая температура | -55 to 150 °C |
| Msl Level | 1 |
| Lead Finish | Tin/Lead |
| Max Proce | 260 |
SKU: MBRD1035CTLT4