Diode Schottky 30V 2A 2-Pin SMB T/R

This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guarding for Over-Voltage Protection Low Forward Voltage Drop NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant