Diode Schottky 30V 1A 2-Pin DO-214AA T/R
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier"s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
- Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25 °C)
- Small Compact Surface Mountable Package with J-Bend Leads
- Highly Stable Oxide Passivated Junction
- Guardring for Stress Protection
- Pb-Free Package is Available
- ESD Ratings: Human Body Model = 3B (> 16000 V), Machine Model = C (> 400 V)
- AEC-Q101 Qualified and PPAP Capable
- All Packages are Pb-Free
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Configuration | Single |
| Peak Repe | 30 V |
| Peak Forw | 0.55 V |
| Supplier | DO-214AA |
| Peak Reve | 1 mA |
| Type Prod | Schottky Diode |
| Peak Aver | 1 A |
| Peak Non | 40 A |
| Описание продукта | 4.75 x 3.95 x 2.45 mm |
| Schedule B | 8541100080 |
| HTSN | 8541100080 |
| Страна происхождения | Китай |
| Рабочая температура | -65 to 125 °C |
| Msl Level | 1 |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
SKU: MBRS130