Diode Schottky 20V 4A 2-Pin DO-214AB T/R
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier"s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very High Blocking Voltage - 200 V
- 175°C Operating Junction Temperature
- Guardring for Stress Protection
- Pb-Free Package is Available
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Configuration | Single |
| Peak Repe | 20 V |
| Peak Forw | 0.5 V |
| Supplier | DO-214AB |
| Peak Reve | 2 mA |
| Type Prod | Schottky Diode |
| Peak Aver | 4 A |
| Peak Non | 80 A |
| Описание продукта | 7.15 x 6.25 x 2.45 mm |
| Schedule B | 8541100080 |
| HTSN | 8541100080 |
| Страна происхождения | Китай |
| Рабочая температура | -65 to 125 °C |
| Msl Level | 1 |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
SKU: MBRS320