Diode Schottky 100V 100A 2-Pin Thinkey1
Diode Schottky 100V 100A 2-Pin Thinkey1
- Tungsten schottky barrier
- Oxide passivated structure for very low leakage currents
- Guard ring protection for increased reverse energy capability
- Epitaxial structure minimizes forward voltage drop
- Hermetically sealed, low profile ceramic surface mount power package
- Low package inductance
- Very low thermal resistance
- Available as standard polarity (strap-to-anode, MSASC100W100H) and reverse polarity (strap-to-cathode: MSASC100W100HR)
Характеристики
| Бренд | Microchip |
|---|---|
| Lead Finish | Tin/Lead |
| Peak Reve | 1 mA |
| Supplier | Thinkey1 |
| Peak Forw | 0.95 V |
| Msl Level | 1 |
| Рабочая температура | -65 to 175 °C |
| Peak Repe | 100 V |
| Описание продукта | 9.6 x 9.6 x 2.49 mm |
| Type Prod | Schottky Diode |
| Peak Aver | 100 A |
| Configuration | Single |
| Peak Non | 500 A |
| Schedule B | 8541100040 |
| HTSN | 8541100050 |
SKU: MSASC100W100H