Diode PIN Attenuator/Switch 100V 2-Pin Style B

These series of PIN diodes are designed for applications requiring small package size and moderate average power handling capability. The low capacitance of the UM6001 allows them to be used as series switching elements to 1 GHz. The low resistance of the UM6001 is useful in applications where forward bias current must be minimized. Because of its thick I-region width and long lifetime the UM6000 and UM6001 have been used in distortion sensitive and high peak power applications, including receiver protectors, TACN, and IFF equipment. Their low capacitance allows them to be useful as attenuator diodes at frequencies greater than 1 GHz. The UM6001 has been used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave applications using coaxial, micro strip, and strip line techniques at frequencies beyond XBand. The “B” and “E” style leaded packages offer the highest available power dissipation for a package this small. They have been used extensively as series switch elements in micro strip circuits. The “C” style package duplicates the physical outline available in conventional ceramic-metal packages but incorporates the many reliability advantages of the Microsemi construction.

• Reverse Voltage 100V
• Voltage ratings to 1000V
• Average power dissipation to 6 W
• Series resistance as low as 0.4 ?
• Carrier lifetime greater than 1.0 µs
• Non cavity design
• Thermally matched configuration
• Low capacitance at 0 V bias
• Low conductance at 0 V bias
• Compatible with automatic insertion equipment