BFU730F Second Stage Ku Band LNA Evaluation
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
- 110 GHz fT silicon germanium technology
- High maximum power gain 18.5 dB at 5.8 GHz
- Low noise high gain microwave transistor
- Noise figure (NF) = 0.8 dB at 5.8 GHz
Характеристики
| Бренд | NXP |
|---|---|
| Type Prod | RF and Microwave Tools |
| Category | RF and Microwave Tools |
| Schedule B | 9023000000 |
| HTSN | 9023000000 |
| Страна происхождения | Китай |
| Audio I O | Нет |
| Gpio | Нет |
| Ethernet | Нет |
SKU: OM7693/BFU730F598