Analog Switch Dual SPDT 10-Pin DFN T/R
The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2616, DG2617, DG2618 are ideal for portable and battery powered applications. The DG2616, DG2617, DG2618 have built-in charge-pump circuitry which lowers the minimum supply voltage to + 1.5 V while maintaining low on-resistance. The Control circuitry allows the DG2616, DG2617, DG2618 to operate in different configurations. Built on Vishay Siliconix"s low voltage process, the DG2616, DG2617, DG2618 has an epitaxial layer that prevents latch-up. Break-before-make is guaranteed. The DG2616, DG2617, DG2618 are manufactured in space saving DFN-10 (3.0 x 3.0 mm). And as a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device terminations and is 100 % RoHS compliant.
- Low voltage operation (1.5 V to 3.6 V)
- Low on-resistance - RON: 4.2 O typ. at 2.7 V
- Fast switching: tON = 39 ns tOFF = 8 ns
- DFN-10 package
Характеристики
| Бренд | Vishay |
|---|---|
| Supplier | DFN |
| Рабочая температура | -40 to 85 °C |
| Описание продукта | 3 x 3 x 0.88 mm |
| Operating | 3.6|1.5|3 V |
| Lead Finish | Gold |
| Max Proce | 260 |
| Msl Level | 1 |
| Type Prod | Analog Switch |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Maximum P | 1191 mW |
| Output Si | Differential |
| Chip Enab | Да |
| Number Of | 2 |
| Maximum O | 5 to 10 Ohm |
| Maximum T | 69@2.7V ns |
| Maximum O | 7@3.6V Ohm |
| Number Of | 2 |
| Configuration | Dual SPDT |
| Input Sig | Single |
| Power Sup | Single |
| Number Of | 4 |
| Polarity | Non-Inverting |
| Maximum H | 150 mA |
| Maximum L | 150 mA |
| Operating | 0.3@3.6V |
SKU: DG2618DN-T1-E4