8GNDFLASHLX8TSOP1

Offered in 512Mx8bit, the K9K8G08U0D is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250µs on the (2K+64)Byte page and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data Input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0D's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0D is an optimum solution for large non-volatile storage applications such as solid state file storage and other portable applications requiring non--volatility.

• Voltage Supply
  • 3.3V Device: 2.7V to 3.6V
• Organization
  • Memory Cell Array : (512M + 16M) x 8bit
  • Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
  • Page Program : (2K + 64)Byte
  • Block Erase : (128K + 4K)Byte
• Page Read Operation
  • Page Size : (2K + 64)Byte
  • Random Read : 25µs(Max.)
  • Serial Access : 25ns(Min.)
• Fast Write Cycle Time
  • Page Program time : 250µs(Typ.)
  • Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
  • Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
  • ECC Requirement : 1bit/528Byte
• Command Register Operation
• Unique ID for Copyright Protection