512K X 8, BYTE PROGRAM, 128B SECTOR

The GLS29VF040 are 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with high-performance SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The GLS29SF020/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The GLS29VF020/040 devices write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x8 memories.Featuring high performance Byte-Program, the GLS29SF020/040 and GLS29VF020/040 devices provide a maximum Byte-Program time of 20 µsec. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of at least 10,000 cycles. Data retention is rated at greater than 100 years.

• Organized as 256K x8 / 512K x8
• Single Voltage Read and Write Operations
  • 2.7-3.6V for GLS29VF020/040
• Superior Reliability
  • Endurance: 100,000 Cycles (typical)
  • Greater than 100 years Data Retention
• Low Power Consumption:
  • Active Current: 10 mA (typical)
  • Standby Current:
• 1 µA (typical) for GLS29VF020/040
• Sector-Erase Capability
  • Uniform 128 Byte sectors
• Fast Read Access Time:
  • 70 ns for GLS29VF020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
  • Sector-Erase Time: 18 ms (typical)
  • Chip-Erase Time: 70 ms (typical)
  • Byte-Program Time: 14 µs (typical)
  • Chip Rewrite Time:
• 8 seconds (typical) for GLS29SF/VF040
• Automatic Write Timing
  • Internal VPP Generation
• End-of-Write Detection
  • Toggle Bit
  • Data# Polling
• CMOS I/O Compatibility for GLS29VF020/040
• JEDEC Standard
  • Flash EEPROM Pinouts and command sets
• Packages Available
  • 32-lead PLCC
  • 32-lead TSOP (8mm x 14mm)
• All non-Pb (lead-free) devices are RoHS compliant