5.0V 8K x 8 Asynchronous Static RAM
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8Kx 8. It is fabricated using high-performance, high-reliability CMOS technology. All inputs and outputs of the IDT7164 are TTL-compatible andoperation is from a single 5V supply, simplifying system designs. Fullystatic asynchronous circuitry is used, requiring no clocks or refreshingfor operation. The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-pin 600 mil CERDIP. Military grade product is manufactured in compliance with MIL-STD-883, Class B, making it ideally suited to military temperature applicationsdemanding the highest level of performance and reliability.
- High-speed address/chip select access time
- Military: 20/25/35/45/55/70/85/100ns (max.)
- Industrial: 20/25ns (max.)
- Commercial: 20/25ns (max.)
- Low power consumption
- Battery backup operation
- 2V data retention voltage (L Version only)
- Produced with advanced CMOS high-performance technology
- Inputs and outputs directly TTL-compatible
- Three-state outputs
- Available in 28-pin DIP, CERDIP and SOJ
- Military product compliant to MIL-STD-883, Class B
Характеристики
| Бренд | Renesas Electronics |
|---|---|
| Timing Type | Asynchronous |
| Number Of Words | 8 kWords |
| Density | 64 Kb |
| Рабочая температура | 0 to 70 °C |
| Number Of Ports | 1 |
| Address B | 13 Bit |
| Number Of | 8 Bit |
| Number Of | 8 Bit |
| Maximum O | 90 mA |
| Описание продукта | 17.9 x 7.6 x 2.41 mm |
| Maximum R | 25 ns |
| Supplier | SOJ |
| Typical O | 5.0000 V |
| Schedule B | 8542320070 |
| HTSN | 8542320041 |
| Страна происхождения | United States |
| Screening Level | Commercial |
| Lead Finish | Matte Tin |
| Max Proce | 260 |
| Msl Level | 3 |
| Длина | 17.9 |
| Ширина | 7.6 mm |
| Pitch | 1.2700 |
SKU: 7164L25YG