1200 V power Schottky silicon carbide diode
1200 V power Schottky silicon carbide diode
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Peak Aver | 20 A |
| Peak Repe | 1200 V |
| Рабочая температура | -40 to 175 °C |
| Type Prod | Schottky Diode |
| Configuration | SiC |
| Peak Non | 700 A |
| Peak Reve | 800 uA |
| Peak Forw | 2.25 V |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Junction | 0.45 Max °C/W |
SKU: STPSC20H12D