POWER MOSFET

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• RDS(on) max: 13 m?