POWER MOSFET
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- RDS(on) max: 0.16 O
仕様
| Brand | STMicroelectronics |
|---|---|
| Operating temperature | -55 to 175 °C |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum C | 10 A |
| Maximum D | 60 V |
| Maximum G | ±20 V |
| Typical T | 64 ns |
| Typical T | 14 ns |
| Rds On | 0.16@10V Ohm |
| Typical F | 3.7 ns |
| Typical R | 5.3 ns |
| Screening Level | Automotive |
| Family | STD15P6F6AG |
| Packaging | T/R |
SKU: STD15P6F6AG