RF Components
The AFT18S230SR3 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
Greater Negative Gate-Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.
Specifications
| Brand | NXP |
|---|---|
| Operating temperature | -40 to 225 °C |
| Maximum D | 65 V |
| Channel Type | N |
| Maximum G | 10 V |
| Channel Mode | Enhancement |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Country of origin | Malaysia |
| Packaging | Tape and Reel |
| Family | AFT18S230S |
SKU: AFT18S230SR3