POWER MOSFET
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Specifications
| Brand | STMicroelectronics |
|---|---|
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Country of origin | China |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 24 A |
| Maximum D | 60 V |
| Maximum G | ±20 V |
| Typical T | 10 ns |
| Typical T | 56 ns |
| Typical F | 7 ns |
| Typical R | 19 ns |
| Screening Level | Automotive |
| Family | STD30N6LF6AG |
| Packaging | T/R |
SKU: STD30N6LF6AG