SRAMs (asynchronous)

The ISSI IS66WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI"s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS66WV51216DBLL is packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). The device is also available for die sales.

• High-speed access time:
  • 70ns
  • 55ns
• CMOS low power operation
• Single power supply
  • VDD = 2.5V-3.6V
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available