NOR Flash Memory

P30-65nm SBC device is offered in 64-Mbit and 128-Mbit. Benefits include high-speed interface NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, a dramatical improvement in buffer program time through larger buffer size, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices. P30-65nm SBC device is manufactured using 65nm process technology.

• High Performance:
  • 65ns initial access time for Easy BGA and QUAD+
  • 75ns initial access time for TSOP
  • 25ns 8-word asynchronous-page read mode
  • 52MHz with zero WAIT states, 17ns clock-to data output synchronous-burst read mode
  • 4-, 8-, 16- and continuous-word options for burst mode
  • 1.8V Low Power buffered programming at 1.8MByte/s (Typ) using 256-word buffer
  • Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using 256-word buffer
• Architecture:
  • Asymmetrically-blocked architecture
  • Four 32-KByte parameter blocks: top or bottom configuration
  • 128-KByte array blocks
  • Blank Check to verify an erased block
• Voltage and Power:
  • VCC (core) voltage: 1.7V - 2.0V
  • VCCQ (I/O) voltage: 1.7V - 3.6V
  • Standby current: 30µA(Typ)/55µA(Max)
  • Continuous synchronous read current: 23mA (Typ)/28mA (Max) at 52MHz
• Enhanced Security:
  • Absolute write protection: VPP = Vss
  • Power-transition erase/program lockout
  • Individual zero-latency block locking
  • Individual block lock-down capability
  • Password Access feature
  • One-Time Programmable Register:
  • 64 OTP bits, programmed with unique information by Numonyx
  • 2112 OTP bits, available for customer programming
• Software:
  • 20µs (Typ) program suspend
  • 20µs (Typ) erase suspend
  • Basic Command Set and Extended Function Interface (EFI) Command Set compatible
  • Common Flash Interface capable
• Density and Packaging:
  • 56-Lead TSOP (128-Mbit, 64-Mbit)
  • 64-Ball Easy BGA (128-Mbit, 64-Mbit)
  • 88-Ball QUAD+ Package (128-Mbit)
  • 16-bit wide data bus
• Quality and Reliability:
  • JESD47E Compliant
  • Operating temperature: -40°C to +85°C
  • Minimum 100,000 erase cycles
  • 65nm process technology