MOSFETS
MOSFETS
Spezifikationen
| Brand | Vishay |
|---|---|
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Country of origin | China |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 40.6 A |
| Maximum D | 40 V |
| Maximum G | ±20 V |
| Typical T | 18 ns |
| Typical T | 47 ns |
| Typical F | 10|25 ns |
| Typical R | 11|82 ns |
| Family | SiR814DP |
| Packaging | T/R |
SKU: SIR814DP-T1-GE3